Publications

Over the last decade, the field of speech processing has made tremendous progress and speech technology is ready to move in several important application areas.

We have designed and developed a new class of varactors that have been noteworthy beneficiaries of the techniques evolved for GaAs IMPATTs.

A Ga(0.47)In(0.53)As field effect transistor with a novel GaAs lattice-mismatched gate (called LMG-FET for short) is reported.

It is well known that electrons move much faster in GaAs than in Si, and this attribute makes the GaAs-based metal oxide semiconductor field effect transistors (MOSFETs) very attractive for high-fr

There is need to investigate new technological directions to make the metro network more efficient at a lower cost.

Alcatel developed a new generation of dual-frequency radar altimeter (POSEIDON 2) which works in C and Ku band.

The L multiplex terminals are used for Bell System long-haul telephone circuits, including those transmitted over the Ll and L3 coaxial systems, the TD-2, T H , T.I and TL microwave systems.

Conventional growth chemistries for deposition of high quality III/V semiconductor thin films by metalorganic chemical vapor deposition (MOCVD) involve use of arsine and phosphine as the Group V re

A new, high performance, low cost power converter system architecture is proposed. The system consists of a main converter and a multifunctional load conditioner.

A new high temperature, self-bonding magnet wire has been developed, with greatly improved bond strength retention at temperatures in excess of 180°C.