Publications

After the IEEE 802.11 standardization group established the first wireless LAN standard two years ago, several efforts were started to increase data rates and also to use other bands.

Present HV-PMOS structures requires a low-doped drain formed by an etch and an implant of boron (for BCDMOS technology.) However, the etch leaves a gap underneath the poly gate thereof, causing re

1. INTRODUCTION: The world of telecommunications is undergoing a fundamental restructuring based upon a deeper understanding of its nature.

A new type of hydrogen aging loss increase at the 1385 nm OH peak can arise in certain types of fibers when exposed to 0.01 atmospheres of hydrogen for less than 4 days at room-temperature.

New icosahedral (I) and amorphous (Am) phases in the Mg-Al- Ag system have been produced by liquid quenching.

We report the isolation of a new major defect in n-type silicon following room temperature electron irradiation.

In recent years heterojunction FETs of many varieties have been investigated for application to high speed electronics.

Linear properties of a solid, consisting of 10 sup (22) -10 sup (23) particles/cm sup 3 interacting through infinite-range Coulomb interactions, are well described by the concept of quasi-particles

We use both time-resolved and static high resolution electron energy loss spectroscopies (EELS) to follow the chemisorption and subsequent decomposition of formic acid (HCOOH) on a Cu (100) surface

The problem of noise reduction has attracted a considerable amount of research attention over the past several decades.