Publications

The dynamics of the random field Ising model quenched to low temperatures are studied with use of a continuum interface model.

Experiments and calculations are used to illustrate the role of nonequilibrium electron transport in determining the performance of InP/In sub (0.53) Ga sub (0.47) As heterostructure bipolar transi

Reducing length scales in n-p-n heterojunction bipolar transistors leads to changes in both the mode of operation and the fundamental limits ro device performance.

Reducing length scales in n-p-n heterojunction bipolar transistors leads to changes in both the mode of operation and the fundamental limits to device performance.

We demonstrate the existence of a nonequilibrium electron-hole- plasma in the semiconductor GaAs under the influence of high electric fields.

We calculate the energy loss rate of a quasi-2D hot-electron gas at a semiconductor heterojunction due to the emission and reabsorption of nonequilibrium optical phonons.

The dynamics of nonequilibrium electron transport in submicron devices has been explored with the technique "Hot Electron Spectroscopy.

Observation of the nonequilibrium optical phonons population associated with electron transport in quantum-cascade lasers is reported.

The dynamics of nonequilibrium phonons in heterolayers, where the carriers are quasi-two-dimensional (2D) while the equilibrium lattice excitations are those of the bulk (3D), require a new theoret

The dynamics of nonequilibrium phonons in heterolayers, where the carriers are quasi-two-dimensional (2D) while the equilibrium lattice excitations are those of the bulk (3D), require a new theore