The plasma-assisted deposition on insulator films for microelectronics is reviewed. Emphasis is given to the deposition and properties of silicon nitride and silicon dioxide.
The importance of major plasma parameters (electron temperature, and ion and electron densities) in plasma-induced damage is discussed.
In this study, epitaxial layers of mercury telluride were grown at the lowest temperature ever reported for this material.
Titanium dioxide, titanium nitride, and titanium diboride have valuable properties for a variety of applications such as optical coatings, decorative coatings, and hard metal coatings.
Thin films of titanium borides were deposited at temperatures from 480C to 650C using a glow discharge and feed gases of TiCl4, BCl3, and H2.
The detrimental effects of spacecraft charging are well known, particularly when the charging leads to arcing on solar array and, consequently, to permanent power loss.
During the past 18 months development of dry etch pattern transfer technology was done at the AT&T Bell Laboratories Device Development Line (DDL) at Allentown to support fabrication of the mil
With the growing application of III-V compound materials in optoelectronic, logic and communications devices, feature sizes are becoming smaller and circuit sophistication is following silicon tech
Plasma etching plasma an essential role in modern integrated circuit manufacturing.
We calculate the dielectric function of the lattice Anderson model via an auxiliary boson large N method suitably generalized to include the effects of the long range part of the Coulomb interactio
