Publications

Hubbing has been shown to be an economical solution to the problems of providing both analog and digital special services.

The purpose of this paper is to describe the layout, operation, and external communications links of the Andover, Maine, earth station.

Devices fabricated from III-V compound materials have become increasingly important to the communications and electronics industry.

The application of the nitrogen plasma source assisted molecular beam epitaxy method (PAMBE) for the growth of GaN and related compounds is reviewed, with emphasis on the growth dependent material

Plasma charging damage is mainly a phenomenon of high-field stressing of thin gate-oxides during plasma processing.

We examined the problem of detecting plasma charging damage in deep submicron technology where the gate-oxide is ultra-thin.

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported.

Fluorocarbon films of varying composition have been deposited from pulsed and continuous plasmas of octafluorocyclobutane (c-C4F8) and c-C4F8/Ar.

The plasma-assisted deposition on insulator films for microelectronics is reviewed. Emphasis is given to the deposition and properties of silicon nitride and silicon dioxide.

The importance of major plasma parameters (electron temperature, and ion and electron densities) in plasma-induced damage is discussed.