It is more than a century since the publication of the original paper by Langmuir on plasma oscillations.(1) The discovery of an electromagnetic wave in a fully conducting gas -- now called the Al
A long-standing problem in plasma processing has been imprecise control and characterization of dissipated power.
This is an invited paper to the EOS/ESD symposium. ESD and plasma-charging damage are different modes of electrical stress that degrade integrated circuits.
This report summarizes the development of plasma-deposited amorphous oxygen-doped silicon nitride (oxygen doped SiNCAP) films for use as the interlevel dielectric on two-level metal codes produced
We have successfully demonstrated the growth of conformally aligned carbon nanotubes using microwave plasma enhanced chemical vapor deposition (MPECVD) processes.
The excitation of two-dimensional (2D) plasmons in Al(x)Ga (1-x)As-GaAs heterostructures has been investigated with far- infrared transmission spectroscopy.
At present, wavelength-division-multiplexed fibre lines routinely operate at 10 Gbit s(-1) per channel.
We present a basic building block for the realization of integrated active plasmonic devices: a distributed-feedback semiconductor laser working at room temperature and λ=1.3μm obtained with metal
We report inelastic x-ray scattering measurements of the energy, line width, and dispersion of the plasmon in metallic lithium ammonia at an electron concentration of 4 x 10 sup (18) e-/cm sup 3.
Whether molecular solids, oligomers, or polymers, organic materials have been shown to be attractive candidates for both passive and active roles in electronic devices because of their compatibilit
