Publications

This is an invited paper to the EOS/ESD symposium. ESD and plasma-charging damage are different modes of electrical stress that degrade integrated circuits.

This report summarizes the development of plasma-deposited amorphous oxygen-doped silicon nitride (oxygen doped SiNCAP) films for use as the interlevel dielectric on two-level metal codes produced

We have successfully demonstrated the growth of conformally aligned carbon nanotubes using microwave plasma enhanced chemical vapor deposition (MPECVD) processes.

The excitation of two-dimensional (2D) plasmons in Al(x)Ga (1-x)As-GaAs heterostructures has been investigated with far- infrared transmission spectroscopy.

At present, wavelength-division-multiplexed fibre lines routinely operate at 10 Gbit s(-1) per channel.

We present a basic building block for the realization of integrated active plasmonic devices: a distributed-feedback semiconductor laser working at room temperature and λ=1.3μm obtained with metal

We report inelastic x-ray scattering measurements of the energy, line width, and dispersion of the plasmon in metallic lithium ammonia at an electron concentration of 4 x 10 sup (18) e-/cm sup 3.

Whether molecular solids, oligomers, or polymers, organic materials have been shown to be attractive candidates for both passive and active roles in electronic devices because of their compatibilit

The electrical properties of polythiophene thin films can be varied from insulating to superconducting using the field effect.

RGANIC plastics are used extensively in the manufacture of telephone apparatus and equipment.