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Direct detection systems have been vulnerable to polarization mode dispersion (PMD).

PMOS transistors have been fabricated in device-worthy Si which was achieved by large-area laser-crystallisation of Si on silica.

Recently, a smart antenna, i.e., a blind adaptive antenna array, has attracted much attention to improve the capacity of a future code-division multiple-access wireless communications system.

Recently, the smart antenna (a blind adaptive antenna array) has brought much attention to its ability to improve the future code-division multiple-access (CDMA),wireless communications systems.

Describes a new method of folding tickets to eliminate stoppages in the tubes.

In a previous paper is was established that phosphorus diffusion at concentrations above solid solubility generates silicon self-interstitials.

Defect generation during phosphorus diffusion at concentration levels below solid solubility was investigated from ion implanted samples.

This paper reviews some microscopic theoretical concepts for describing the migration and reaction processes of point defects in semiconductors.

Many elements (for example the alkali metals), exhibit a body- centered cubic crystalline form.

There is an increasing interest in the use of In as an alternative p-type dopant for silicon device processing.

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