Publications

There is increasing interest in the heteroepitaxial growth of III-V compound semiconductors on Si substrates for electronic and optoelectronic applications.

There is increasing interest in the heteroepitaxial growth of III-V compound semiconductors on Si substrates for electronic and optoelectronic applications.

The growth kinetic of chemical beam epitaxy (CBE) was investigated with the growth of GaAs, AlGaAs, InP, InGaAs.

The hydride vapor phase epitaxial (VPE) growth of semi-insulating (SI) InP:Fe is reported for the first time.

High quality p-type InP is critical for devices ranging from high power injection lasers to space-based solar cells.

The author traces the growth of a system originally planned for a 20,000-line capacity to provide for a 60,000-line capacity. The 7-A.

Let f(x) ~qx + r (mod n). Define a digraph G sub f having nodes 0,1,...,n - 1 and an edge from i to j if f(i)~j (mod n).

The determination of the vibrational force field for a polyatomic molecule is an important, though difficult problem.

The k-server problem isa generalization of the paging problem, and is the most studied problem in the area of competitive online problems.

Radiation damage prevents obtaining images from individual molecules.