Publications

In telecommunications networks, distributed power management across heterogeneous hardware requires a standardized representation of each system's capabilities to decouple distributed high-level al

This paper describes the design of the M4040 2-kw CW travelingwave tube amplifier which was developed specifically for communications applications.

1.1 General T h e T e l s t a r ground t r a n s m i t t e r is designed to produce a 2-kw frequency-modulated signal in t h e 6-kmc b a n d , suitable for t h e transmission of television or multi

This paper will review our current understanding of Ge sub x Si sub 1-x strained layer growth and the application of such films to heterojunction devices.

This review considers the growth and characterization of epitaxial alkaline earth fluoride compounds on semiconductors.

Single crystal InP wafers grown by both the Vertical Gradient Freeze (VGF) technique and the Liquid Encapsulated Czochralski (LEC) have been studied and compared in terms of overall quality.

We summarize some recent work on the formation mechanisms, structure and composition of oxynitride and high-g films, as investigated by high-resolution medium-energy ion scattering (MEIS).

There is increasing interest in the growth of III-V compound semiconductors on Si substrates for electronic as well as for integrated optoelectronic applications.

There is increasing interest in the growth of III-V compound semiconductors on Si substrates for electronic as well as for integrated optoelectronic applications.

The growth of AlGaAs-GaAs double-heterostructure lasers on Si substrates by metalorganic chemical vapor deposition has been reported by several groups in the past few years.