The GaAs metal-oxide semiconductor field effect transistors (MOSEFTs) potentially have great advantage over Si-based MOSFETs for high-speed low-power logic integrated circuits (ICs) and monolithic
Progress in fabrication of packaged discrete L- and X-band power AlGaN/GaN HFETs is presented.
Business and engineering goals normally require that reliability predictions be provided quickly, consistently, systematically, accurately, and with known precision.
Magnetic components have been and will continue to be an essential element in power conversion and management circuits.
Our ability of controlling the growth and interfaces of thin dielectric films on III-V semiconductors by ultrahigh vacuum deposition has led to investigations of gate stacks containing rare earth o
The talk will describe recent work on coding of motion video signals at low bit rates as required in Video-Conferencing transmission applications and in storing motion pictures on digital storage m
Twenty years have passed since the first serious proposal was made to employ a glass fiber waveguide as a telecommunications transmission medium.
Lasers emitting near 1.3 and 1.55microns, fabricated using the InGaAsP material system are widely used in many commercial lightwave transmission systems.
Summary form only given. The erbium-doped optical amplifier moved very quickly from invention in 1987 to the cornerstone of high speed long-haul networks.
In the mid 1970's a set of studies of rain attenuation on line- of-sight microwave radio links was undertaken by a number of organizations of Bell Laboratories.
