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A new technique for the growth of III-V compounds by molecular beam epitaxy has been developed which uses electron beam heating for evaporating the group III liquid metals.

The valence band offset in GaSb-Al(x)Ga(1-x)Sb quantum wells has been determined by a light scattering method and found to be nearly the same as in their GaAs-Al(x)Ga(1-x)As counterparts.

Self-consistent, scalar-relativistic, linear-augmented-plane- wave (LAPW) calculations have been carried out for four (real and hypothetical) crystalline forms of cesium with the bcc, simple-cubic

X-ray core level photoemission measurements of thin, MBE grown ZnTe/AlSb heterojunctions were undertaken in order to obtain the valence and conduction band offsets for this materials system.

AN IMPORTANT component of the modulator-demodulator circuit at the carrier program terminal is the band pass filter which selects the lower side band resulting from modulation of the audio frequenc

The subroutines in LAPACK for reducing a symmetric positive definite generalized eigenvalue problem to a standard symmetric banded eigenvalue problem and for reducing a symmetric banded matrix to t

We report on infrared spectroscopy of bilayer graphene integrated in gated structures.

Angle-resolved photoemission spectroscopy (ARPES) measurements of the E(k||) band structure are reported for 1T-TaS2 and 2H-TaSe2 at temperatures where commensurate CDW's are well developed.

B ARRIER systems for the transmission of many telephone channels on a single metallic circuit have grown to be very important in the telephone network.

Numerous experiments indicate that the conduction process near the band edges of amorphous semiconductors differs from that in crystals.