The performance of optical burst switched (OBS) networks is compared to that of optical circuit switched (OCS) networks in terms of bandwidth efficiency.
In this paper we compare the base-collector transit time of GaAsSb- and InGaAs-based double heterojunction bipolar transistors (DHBT) at low and high collector current.
The long-term solder attachment reliability of leaded surface mounted (SM) devices is controlled in part by the lead compliance.
The long-term solder attachment reliability of leaded surface mounted (SM) devices is controlled in part by the lead compliance.
The assignment of resonance energies in conjugated molecules is a problem of longstanding interest.
In the present theoretical study we are able to show that the resonance energies of the higher annulenes are greater than previously recognized, particularly in the case of [10]annulene.
The S3R and S4R space power converter topologies are shown to be suitable for regulated bus power systems.
A comparative study of the real and imaginary loss in III-V amorphous semiconductors and chalcogenide glasses has led to t following two major results.
Angle-resolved synchrotron radiation photoemission has been used to map the adsorbate-induced surface valence bands of the simple chemisorbed Ni(100) c(2x2)-O structure and the reconstructed Ni(100
We investigate the tolerance of PSBT, DQPSK and RZ-DQPSK formats to in-band crosstalk at 43 Gbit/s when considering 50 GHz-spaced Wavelength Selective Switches.
