Publications

The author has been involved in the planning and implementation of hundreds of microwave links for various AT&T Business Units.

The solid phase epitaxial growth of Sb implanted amorphous silicon has been investigated by channeling and TEM techniques over a wide Sb concentration range.

A dual-gun reactive ion-beam sputtering technique has been used to reproducibly fabricate Al sub 2 O sub 3 dielectrics with low electrical loss for controlled thicknesses ranging from approximately

This preliminary study examines the influence of interface attributes and presentation quality on remote auditors' cognitive immersion and perceived social presence in a professional videoconferenc

A functional renormalization group 5-epsilon expansion is used to calculate the exponent, zeta, which measures the roughness of an interface in a disordered Ising system as a function of length sca

The concept of strained layer epitaxy has stimulated new interest in the growth of IV-IV heterostructures.

We examine the derivation and use of a "d"-1 dimensional interface Hamiltonian to describe properties of a "d" dimensional liquid- vapor or Ising system near the critical point.

There is an increasing experimental evidence for the existence of liquid-like layers on crystal surfaces and in grain boundaries, although the issue remains controversial.

We have used photothermal deflection spectroscopy to examine deep gap absorption in amorphous silicon films deposited on silicon oxide and silicon nitride.

Infrared detectors based on a quantum cascade have been proposed to suppress the dark current which is a limiting factor in quantum well infrared photodetectors.