Publications

Heteroepitaxial layers grown by Molecular Beam Epitaxy on silicon offer well-controlled interfaces parallel to the surfaces of a thin foil.

The interface structures and interfacial defects in CoSi sub 2 /Si heteroepitaxy have been the subject of intensive study for over a decade now, but the system continues to provide us with surprise

The study of interfaces represents one of the most challenging areas in materials science.

Chemical and physical analyses of materials interfaces are important technological fields, but difficult scientific challenges.

This paper presents an approach to interfacing a computing environment for statistics to numerical calculations, text processing and other computations, in the context of the Quantitative Programmi

We have devised a contact printing technique for transferring functional materials from the raised regions of a stamp onto a substrate.

A silicon (Si) wafer passivated with a nitride film, fabricated by low-pressure chemical vapor deposition, and coated with epoxy was used as a test specimen to characterized the interfacial degrada

There has been an increasing interest in recent months in the dual dielectric metal insulator semiconductor (MIS) cell as a nonvolatile semiconductor memory element.

Cross-sectional transmission electron microscopy (XTEM) of this sample revealed an interfacial reaction zone with complicated microstructure, and the dominant interfacial compound was identified to

High dielectric constant (k) materials are being considered as a replacement for SiO2 and SIN in capacitors for DRAM and RF circuits as critical dimensions of ICs continue to decrease.