There has been an increasing interest in recent months in the dual dielectric metal insulator semiconductor (MIS) cell as a nonvolatile semiconductor memory element.
Cross-sectional transmission electron microscopy (XTEM) of this sample revealed an interfacial reaction zone with complicated microstructure, and the dominant interfacial compound was identified to
High dielectric constant (k) materials are being considered as a replacement for SiO2 and SIN in capacitors for DRAM and RF circuits as critical dimensions of ICs continue to decrease.
High resolution X-ray diffraction (HRXRD) studies of GaInAs/InP superlattices reveal the presence of an intrinsic interfacial strain at heteroepitaxial interfaces.
High-resolution x-ray diffraction studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices grown by gas-source mole
An interfacing program has been written which enables a user with an AT&T 6300/IBM compatible PC to control a HP4145 Semiconductor Parameter Analyzer via a HPO-IB Bus.
The Teletype 5620 bitmap-display terminal has an external I/0 port that permits a knowledgeable user to construct small interfaces.
AMPL is a language for expressing and manipulating mathematical programming problems, including large-scale linear and nonlinear programming and complementarily problems.
With co-channel deployment, interference is a critical performance limiting factor for LTE networks. Interference alignment is a promising method to deal with interference problem.
For communication channels with delay spreads that are longer than the symbol interval, orthogonal frequencydivision multiplexing is unusable due to its redundant cyclic prefix.
