Publications

Electron and hole tunneling is observed by photoluminescence and photoluminescence excitation spectroscopies in In sub (0.53) Ga sub (0.47) As/InP samples incorporating two quantum wells of differe

We report subnanosecond photoluminescence (PL) decay dynamics of dendron decorated poly(phenylene vinylenes) (PPVs) in solutions and as neat films.

The neutralization of the shallow impurities in GaAs by atomic hydrogen is monitored by low-temperature photoluminescence spectroscopy.

We investigated the near band edge photoluminescence from semi-insulating GaAs crystals after they were annealed either in wafer form or in bulk form.

The room temperature photoluminescence spectra of n-modulation doped GaAs-AlGaAs multiple quantum wells have been studied at high electric fields in order to obtain the distribution function of the

We have investigated photoluminescence from GaAs/Al(x)Ga(1- x)As single heterojunctions.

A significant reduction of the two-dimensional electron gas (2DEG) density n(2D) in a modulation doped GaAs/AlGaAs quantum well is observed when the 2D-electrons are heated by microwave (mw) irradi

The evolution of photoluminescence characteristics of a-Si:H layers as a function of layer thickness is examined in a variety of sample configurations.

The dynamics of resonant photoluminescence (PL) of quantum well (QW) excitons is studied within the thermodynamic description of LA-phonon-assisted relaxation kinetics, taking into account Bose-Ein

Room temperature photoluminescence on (Al,Ga) As double heterostructure laser material containing a buffer layer has been performed.