Large population inversions have been obtained in Cd and Zn ions using broadband soft-x-ray radiation from laser-produced plasmas to photoionize and thereby remove inner-shell d-electrons from the
We propose to construct an inner-shell photoionization laser in sodium at 37.2 nm by photoionizing sodium vapor with the 20.6 and 20.9 nm outputs from the Lawrence Livermore National Laboratory (L
Electron and hole tunneling is observed by photoluminescence and photoluminescence excitation spectroscopies in In sub (0.53) Ga sub (0.47) As/InP samples incorporating two quantum wells of differe
We report subnanosecond photoluminescence (PL) decay dynamics of dendron decorated poly(phenylene vinylenes) (PPVs) in solutions and as neat films.
The neutralization of the shallow impurities in GaAs by atomic hydrogen is monitored by low-temperature photoluminescence spectroscopy.
We investigated the near band edge photoluminescence from semi-insulating GaAs crystals after they were annealed either in wafer form or in bulk form.
The room temperature photoluminescence spectra of n-modulation doped GaAs-AlGaAs multiple quantum wells have been studied at high electric fields in order to obtain the distribution function of the
We have investigated photoluminescence from GaAs/Al(x)Ga(1- x)As single heterojunctions.
A significant reduction of the two-dimensional electron gas (2DEG) density n(2D) in a modulation doped GaAs/AlGaAs quantum well is observed when the 2D-electrons are heated by microwave (mw) irradi
The evolution of photoluminescence characteristics of a-Si:H layers as a function of layer thickness is examined in a variety of sample configurations.
