Publications

Because of the importance that barriers have come to assume in the general field of semiconductors the authors have been urged to publish results of their early experiments in this field.

The profiles of features etched photoelectrochemically in n- InP are studied to determine the factors which govern their distortions and to determine the factors limiting spatial resolution for etc

We have successfully collected size-selected Au clusters from a liquid metal ion source on amorphous carbon substrates.

Amorphous Ti/Si superlattices have been prepared by e-beam evaporation.

There has been a large amount of experimental and theoretical work on optical excitation between quantized levels of superlattices or quantum wells.

We present the first experimental evidence of tunneling and transport of electrons from quantum states in a GaAs/GaAlAs superlattice of a quantum well to a GaAs surface activated to negative electr

Intersubband absorption in a GaAs/AlGaAs quantum well usually happens between two two-dimensional (2D) electronic states.

One of the major limitations of current plasma processing technology is an inability to monitor surface properties, other than reaction rate or surface reflectivity, in-situ.

Photoemission optogalvanic spectroscopy (PEOGS) is a new technique for plasma electrode surface characterization.

Momentum-resolved inverse photoemission spectra have been taken on Pd(111) at lambda omega = 9.7eV.