Publications

Experiments studying phonon mediated drag in the double-layer two-dimensional electron gas system are reported.

Evidence is presented that silicon oxynitride gate dielectrics suppress phosphorus diffusion, as compared to pure silicon dioxide dielectrics.

Phosphorus can be incorporated into DADBS silicon oxide at an oven temperature of 495C by adding trimethyl phosphite to the gas stream of diacetoxyditertiarybutoxysilane and oxygen.

We haved studied P ion implantation induced intermixing of In sub 0.53Ga sub 0.47As quantum wells embedded between InP barriers.

Loss of phosphorus by evaporation, from doped polysilicon and SiO2 films, due to high temperature anneals has been investigated by use of neutron activation analysis technique.

The New Fiber Optic Trans Atlantic Telephone #8 (TAT-8) Ocean Cable electronic hardware shown here with the AT&T Cable Ships Long Lines and Charles L.

One of the main challenges of next generation optical communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits.

Films of bisphenol A polycarbonate have been exposed to photo- aging at 25C with the following variables controlled: l) minimum wavelength of light; 2) O2 or N2 atmosphere; 3) presence or absence

A convenient means for controlling III-V wet chemical etching processes is to use light to generate minority carriers at the semiconductor surface where they can serve as oxidizing or reducing agen

We report the observation of a photo-induced increase in the number of unpaired electron spins in trans-polyacetylene.