Publications

The magneto-PL spectra of modulation-doped, ultra-high mobility GaAs/AlGaAs single heterojunctions (HJs) were studied under a perpendicularly applied magnetic field up to 33 T and at temperatures o

The evolution of the 2DEG-hole magneto-photoluminescence (PL) with decreasing 2DEG density is studied in a high quality 25 nm-wide modulation-doped GaAs/AlGaAs quantum well in magnetic fields Bless

Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines.

Pulsed and cw photoluminescence measurements have been performed on a variety of GaAs doping superlattices with unequal n- and p-doping levels.

We present a systematic study of the photoluminescence of undoped GaAs layers deposited by MOCVD on Si substrates.

We present low-temperature photoluminescence (PL) and excitation (PLE) spectra for single GaAs/A1o.37Ga0.63As MBE-grown quantum wells for which growth was interrupted at each interface for 2 minute

We present low-temperature photoluminescence (PL) and excitation (PLE) spectra for single GaAs/A1o.37Ga0.63As MBE-grown quantum wells for which growth was interrupted at each interface for 2 minute

We obtain the temperature dependence of the homogeneous linewidth of excitons in GaAs quantum wells (QWs) and bulk GaAs using photoluminescence measurements.

The damage distribution in proton bombarded (Al,Ga)As-GaAs- (Al,Ga)As double heterostructure was studied via changes in the photoluminescence intensity of the GaAs layer as a function of proton ene

We present gri CCD photometry of 44 Abell clusters and four cluster candidates. Twenty-one clusters in our sample have spectroscopic redshifts.