Publications

The ability of SIMS to provide depth profiles with less than ppm detection sensitivity while maintaining excellent depth resolution makes SIMS indispensable to the characterization of materials and

Boron is an important elemental component of semiconductor processing with uses as a dopant in devices and also as a major component in dielectric glass films.

Frequency moments of the light scattering spectrum from spin- pair excitation are calculated for the spin 1/2 planar Heisenburg antiferromagnet and compared with those observed experimentally for L

A method has been developed to obtain quantitative electron diffraction data up to a value of Q = 20 angstrom(-1) of the modulus of the scattering vector.

In this paper, we establish a method for estimating the matrix governing mode coupling and attenuation in an optical fiber, and obtain partial quantitative estimates of this matrix for a particular

In ion implantation related research in Si, the role of interstitial clusters in dopant diffusion is fairly well understood.

In this article we want to focus on somewhat different quantitative aspects of these partition theorems.

We have demonstrated quantitative chemical vapor detection with a multimode quantum cascade (QC) laser.

We describe models of Mandarin prosody that allow us to make quantitative measurements of prosodic strengths.

This paper details the quantitative measurement of excess vacancy (V sup ex) defects created in Si via high-energy ion implantation.