We describe models of Mandarin prosody that allow us to make quantitative measurements of prosodic strengths.
This paper details the quantitative measurement of excess vacancy (V sup ex) defects created in Si via high-energy ion implantation.
This tutorial chapter discusses the techniques of spectrum processing and data manipulation required to obtain quantitative microanalytical data from transmission electron energy loss spectra.
The solutions to many real-world problems require reasoning under uncertainty (also known as inexact, approximate, or evidential reasoning).
We measure the impact forces and deflections resulting from drop tests of a mass with a flat impact surface onto flat pads of various elastomeric materials, and show that the forces can be predicte
The optimal compositions of many commercial glasses (such as window glass) are close to the ternary 74SiO(2)-16Na(2)O-10CaO.
Recent reports have demonstrated the possibility of probing acceptor concentrations in bulk semi-insulating GaAs by electronic Raman scattering using 1.06microns radiation.[1] The inefficiency of
Secondary Ion Mass Spectrometry (SIMS) has been used to identify and quantify contaminants in TaSi sub 2 thin films.
We review the use of transmission electron microscopy (TEM) to provide a quantitative measurement of both vacancy and interstitial clusters in ion implanted silicon.
To monitor plasma charging damage, it is common to use extremely large antenna ratio (AR) testers to improve sensitivity.
