Fabrication of InAs QDs grown on (100) InP substrate by GSMBE is reported.
The disappearance of the Si(111) 7X7 LEED pattern upon cobalt deposition (0.25 ML-4 ML) at room temperature indicates an immediate reaction of the Co with the Si surface.
The first room temperature operation of Ga sub (0.47) In sub (0.53) As/Al (0.48) In sub (0.52) As resonant tunnelling (RT) diodes is reported.
We report temperatue pulsed lasing at 1.29microns in an optically pumped GaAsSb/GaAs quantum well VCSEL on a GaAs substrate.
We demonstrate the first room temperature operation of a double heterojunction unipolar hot electron transistor.
In(0.16)Ga(0.84)As(0.15)Sb(0.85)/Al(0.35)Ga(0.65)Sb double heterostructure injection lasers have been grown by molecular beam epitaxy on (100) GaSb substrates.
In this paper we discuss the kinematic and dynamical constrains involved in the design of useful unipolar hot electron transistors and we demonstrate room temperature operation of a double heteroj
Optically pumped lasers emitting near 600 nm at room temperature have been fabricated for the first time in Cd sub (0.25) Zn sub (0.75) Te/Zn Te superlattices grown on GaAs substrates.
The room temperature recrystallization of electroplated Cu films is clearly related to the influence of organic and inorganic additives in the plating bath; however, the underlying mechanisms are s
We present an integrated source of twin photons in the telecom range based on the generation of parametric fluorescence in a semiconductor waveguide.
