Publications

We report measurements of the rate of growth of Ga and Sn clusters on clean Si surfaces.

In this work, we study both experimentally and theoretically how the change of the p-doping profile particularly the p-I junction placement affects the output characteristics of 1.3 micron InGaAsP/

We introduce the theory of modulational instability (MI) of electromagnetic waves in fibers with random polarization mode dispersion.

In the isotropic to lamellar transition, nonlinear fluctuation terms lower the critical temperature tau c and drive the transition first order.

Coupling reactor-scale models of plasma etching equipment to device-scale models of feature profile evolution offers the potential for increased levels of virtual design of both capital equipment a

A model of the electronic transport in a quantum cascade structure under weak illumination in a very large temperature range is proposed.

Using photoluminescence characteristics at room temperature we analyze incorporation of an oxygen-related defect, most likely rubrene- peroxide, which produces an acceptor state in crystalline rubr

Using photoluminescence characteristics at room temperature we analyze incorporation of an oxygen-related defect, most likely rubrene-peroxide, which produces an acceptor state in crystalline rubre

Recent experiments have shown several effects indicative of Bose-Einstein condensation in polaritons in GaAs-based microcavity structures when a harmonic potential trap for the two-dimensional pola

The self-limiting effect during Low Pressure Chemical Vapor Deposition of tungsten is manifested by a sudden interruption of the reaction of reduction of tungsten hexafluoride WF sub 6 by silicon,