Publications

The influence of the quantum well (QW) interfaces with the barrier layers on the rapid degradation of AlGaAs based high power laser bars (808 nm) is investigated.

A UHV scanning tunneling microscope equipped with a field ion microscope (FIM) has been built.

Roller quenching with a cooling rate of about 10 sup 7 K sec sup -1 was used to prepare pure glasses from melts of the high temperature superconductor compositions Bi sub 2 Sr sub 2 CaCu sub 2 O su

This paper examines a multi-release program management approach to bring in a radical shift in test automation strategy for a telecom project.

We present a class of synchronization called room synchronizations and show how this class can be used to implement asynchronous parallel queues and stacks with constant time access (assuming a fet

We report a room temperature, 0.1 /spl mu/m CMOS technology on bulk Si substrates that delivers a record ring-oscillator gate delay of 11.8 psec at 2.5 V.

Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 /spl mu/m were grown by gas source molecular beam epitaxy on (100) InP substrates.

Summary form only given. We report on the room temperature operation of optically pumped vertical-cavity surface-emitting lasers (VCSELs) based on GaAsSb/GaAs quantum wells (QWs).

Fabrication of InAs QDs grown on (100) InP substrate by GSMBE is reported.

The disappearance of the Si(111) 7X7 LEED pattern upon cobalt deposition (0.25 ML-4 ML) at room temperature indicates an immediate reaction of the Co with the Si surface.