Publications

The first room temperature operation of Ga sub (0.47) In sub (0.53) As/Al (0.48) In sub (0.52) As resonant tunnelling (RT) diodes is reported.

We report temperatue pulsed lasing at 1.29microns in an optically pumped GaAsSb/GaAs quantum well VCSEL on a GaAs substrate.

We demonstrate the first room temperature operation of a double heterojunction unipolar hot electron transistor.

In(0.16)Ga(0.84)As(0.15)Sb(0.85)/Al(0.35)Ga(0.65)Sb double heterostructure injection lasers have been grown by molecular beam epitaxy on (100) GaSb substrates.

In this paper we discuss the kinematic and dynamical constrains involved in the design of useful unipolar hot electron transistors and we demonstrate room temperature operation of a double heteroj

Optically pumped lasers emitting near 600 nm at room temperature have been fabricated for the first time in Cd sub (0.25) Zn sub (0.75) Te/Zn Te superlattices grown on GaAs substrates.

The room temperature recrystallization of electroplated Cu films is clearly related to the influence of organic and inorganic additives in the plating bath; however, the underlying mechanisms are s

We present an integrated source of twin photons in the telecom range based on the generation of parametric fluorescence in a semiconductor waveguide.

Using metal organic chemical vapor deposition, we have fabricated self-organized quantum dots that emit efficiently at 1.3 mu m at room temperature.

A report is presented on room-temperature (RT) continuous-wave (CW) laser emission at 1.55 mum of an all InP-based electrically-pumped vertical external-cavity surface-emitting laser (EP-VECSEL).