Al sub x Ga sub 1-x As-GaAs vertical cavity surface emitting lasers on Si are promising GaAs light sources for monolithic integration with Si technology because of their many attractive processing
The control equipment has a capacity of 60 stations and 3 alarm groups, a separate alarm circuit being provided for each of 3 watchmen.
The aim of this paper is to investigate new tracks to tackle the open issues of alarm correlation for complex networks (e.g. IP/SDH or IP/WDM).
Alarm Statistics of the Violation Monitor and Remover By G. S.
The Alcatel-Lucent Network Routing Specialist II (NRSII ) Self-Study Guide will prepare readers to obtain the NRSII Certification from the Service Routing Certification Program.
The correspondence between the forced magnetic reconnection induced by perturbing the boundary of the simple Taylor model and the surface-wave-induced magnetic reconnection given by Alfven resonanc
We demonstrate the frequency doubling of a quantum cascade laser in a multilayered, partially oxidized GaAs/AlOx waveguide.
We investigated the electrical characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors grown simultaneously on n and p type silicon substrates.
A new process technology has been developed for the fabrication of AlGaAs/GaAs heterojunction bipolar transistors which relies on the use of ultra-thin (100-200angstroms) AlGaAs emitter layers.
Vertical p-i-n lasers integrated by wafer-bonding and regrowth on a heterogeneous InP-on-SOI wafer are presented.
