Vertical p-i-n lasers integrated by wafer-bonding and regrowth on a heterogeneous InP-on-SOI wafer are presented.
The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform.
Thickness and composition profiles of AlGaInAs-based layers grown by low-pressure metal organic vapour phase epitaxy in the regime of selective area growth (SAG) have been modelled and measured exp
We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material.
In this letter, successful operation at 10 GHz of T-gate HEMTs on epitaxial structures grown by metal-organic chemical vapor deposition (MOCVD) or MBE on composite substrates is demonstrated.
Although impressive results have been published for GaN-based transistors in a large frequency range reliability demonstration is becoming an important subject of concern.
Summary form only given.
Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established Metalorganic Vapor Phase Epitaxy.
Any largo communication system contains a connecting network, an arrangement of switches and transmission links through which certain terminals can be connected together in many combinations, usual
The problem of simultaneously disseminating k messages in a large network of n nodes, in a decentralized and distributed manner, where nodes only have knowledge about their own contents, is studied
