The correspondence between the forced magnetic reconnection induced by perturbing the boundary of the simple Taylor model and the surface-wave-induced magnetic reconnection given by Alfven resonanc
We demonstrate the frequency doubling of a quantum cascade laser in a multilayered, partially oxidized GaAs/AlOx waveguide.
We investigated the electrical characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors grown simultaneously on n and p type silicon substrates.
A new process technology has been developed for the fabrication of AlGaAs/GaAs heterojunction bipolar transistors which relies on the use of ultra-thin (100-200angstroms) AlGaAs emitter layers.
Vertical p-i-n lasers integrated by wafer-bonding and regrowth on a heterogeneous InP-on-SOI wafer are presented.
The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform.
Thickness and composition profiles of AlGaInAs-based layers grown by low-pressure metal organic vapour phase epitaxy in the regime of selective area growth (SAG) have been modelled and measured exp
We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material.
In this letter, successful operation at 10 GHz of T-gate HEMTs on epitaxial structures grown by metal-organic chemical vapor deposition (MOCVD) or MBE on composite substrates is demonstrated.
Although impressive results have been published for GaN-based transistors in a large frequency range reliability demonstration is becoming an important subject of concern.
