The ability to construct mesoscopic devices with control of local electron densities on high mobility heterostructures is important to the advancement of reduced dimensional electronic system physi
By using dark-field real-space imaging technique of transmission electron microscopy (TEM), we have observed slow 200angstroms-scale fluctuations of charge-ordered (CO) phase in mixed-valent mangan
Using high dose implantation of 200 KeV Co ions followed by high temperature annealing, we have created buried layers of CoSi sub 2 in crystalline Si of both (100) and (111) orientations.
Recent progress in the growth of thin epitaxial silicides on silicon has resulted in films of very high quality with especially smooth interfaces [1].
Buried single crystal CoSi sub 2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing.
Ion implantation is widely used for doping semiconductors at low concentration, but, with the advent of a new generation of high ion current implanters, synthesizing new materials rather than simpl
High dose implantation of metal ions in silicon followed by annealing can be used to form buried single-crystal disilicide layers with atomically abrupt interfaces.
This session is designed to allow researchers from industry and academia to showcase their latest applications and research prototypes in all communications and networking related topics.
Welcome to the 21st edition of the International Conference on Network Protocols (ICNP) in Göttingen, Germany.
It is our pleasure to welcome you to at Rio de Janeiro, Brazil, for the 2014 International Conference on Network and Service Management (CNSM).
