Rapid thermal processing has been utilized for shallow diffusions from ZnF(2)/SiO(2'), ZnF(2)/Al(2)O(3'), or CdF(2)/SiO(2) structures to increase the effective barrier height of Au- (100) n-InP Sch
We present grazing incidence FTIR data of Au, Al, and Ti vapor-deposited onto self-assembled monolayers (SAMs) of conjugated mono- and dithiols.
We present grazing incidence FTIR data of Au, Al, and Ti vapor- deposited onto self-assembled monolayers (SAMs) of conjugated mono- and dithiols.
T HE metal lens antennas described by the writer elsewhere 1 comprised rows of conducting plates which acted as wave guides; a focussing effect was achieved by virtue of the higher phase velocity o
TN the development of electrical communication, metals and alloys have played a noteworthy part.
A novel method for the design and fabrication of low-cost filtering devices for cellular applications is presented in this paper.
We have found and investigated a metallurgical reaction that occurs between the aluminum and the contact polysilicon in fine-line NMOS devices made using the poly-plug contact process.
One of the primary concerns in the manufacture of advanced microelectronic devices is to ensure that metallic contacts and interconnects do not fall by electromigration or stress-induced voiding.
The metalorganic chemical vapor deposition (MOCVD) materials technology is a vapor-phase growth process that is becoming widely used in the study of the basic physics of novel materials as well as
In this work, MgxZn1-xO (0 = x = 0.33) thin films are epitaxially grown on (0112)r-sapphire substrates by metalorganic chemical vapor deposition.
