A completely new family of Radio Systems has been developed to meet the increasing demand for low cost, easily deployable systems with high capacity transmission.
This paper deals with a design technique for an integrated planar phase shifter on GaAs substrate at millimetre-wave frequencies for optical transmission applications at 40 Gb/s.
Fabrication and microwave performance of a multiple-state resonant- tunneling bipolar transistor (RTBT) are presented.
We report the first low noise high frequency heterostructure bipolar transistor (HBT). Minimum noise figures of 0.46dB and 3.33dB were measured at 2GHz and 18GHz, respectively.
In this letter, we report on high- speed InAlAsSb/InGaSb/InAlAsSb double heterojunction bipolar transistors (HBTs) (DHBT) fabricated using a conventional triple- mesa process.
We report microwave S-parameter measurements and equivalent- circuit modeling of In sub (0.53) Ga sub (0.47) As/In sub (0.52) Al sub (0.48) As/InP SISFETs of 1.1microns gate length.
We propose a broadband microwave vector modulator for symbol rates in the order of multiple Gigabit/sec. and higher.
We study microwave photoresistivity oscillations in a high-mobility two-dimensional electron system subject to strong dc electric fields.
The microwave (MW) photoresistance has been measured on a high-mobility two-dimensional electron gas patterned with a shallow triangular antidot lattice, where both the MW-induced resistance oscill
The in situ generation of hydrazine, the most vigorous reagent for deposition of thin film nitride materials, is accomplished using a method that is compatible with the synthesis of high-purity ele
