Publications

Fabrication and microwave performance of a multiple-state resonant- tunneling bipolar transistor (RTBT) are presented.

We report the first low noise high frequency heterostructure bipolar transistor (HBT). Minimum noise figures of 0.46dB and 3.33dB were measured at 2GHz and 18GHz, respectively.

In this letter, we report on high- speed InAlAsSb/InGaSb/InAlAsSb double heterojunction bipolar transistors (HBTs) (DHBT) fabricated using a conventional triple- mesa process.

We report microwave S-parameter measurements and equivalent- circuit modeling of In sub (0.53) Ga sub (0.47) As/In sub (0.52) Al sub (0.48) As/InP SISFETs of 1.1microns gate length.

We propose a broadband microwave vector modulator for symbol rates in the order of multiple Gigabit/sec. and higher.

We study microwave photoresistivity oscillations in a high-mobility two-dimensional electron system subject to strong dc electric fields.

The microwave (MW) photoresistance has been measured on a high-mobility two-dimensional electron gas patterned with a shallow triangular antidot lattice, where both the MW-induced resistance oscill

The in situ generation of hydrazine, the most vigorous reagent for deposition of thin film nitride materials, is accomplished using a method that is compatible with the synthesis of high-purity ele

In this paper, microwave power performance at 10 GHz of HEMTs fabricated on MOCVD and MBE epitaxial structures grown on composite substrates is demonstrated.

Dynamic measurements of the Henry factor showed that, while αH dramatically increases with the bias current for 3- and 5-QD layer laser structures, αH doesn't diverge for a 10-stack QD and amounts